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Microelectronic Devices and Circuits

Microelectronic Devices and Circuits

As taught in: Spring 2009

Copper interconnects with intermetal dielectrics removed, so the metal scaffolding is visible.

Level:

Undergraduate

Instructors:

Prof. Charles Sodini

Prof. Jing Kong

Prof. Tayo Akinwande

Prof. Jesús del Alamo

Prof. Judy Hoyt

Course Features

  • Lecture notes
  • Projects (no examples)
  • Assignments (no solutions)
  • Exams (no solutions)

Course Description

6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.

Required Text

Amazon logo Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.

Reference Texts

Amazon logo Fonstad, Clifton. Microelectronic Devices and Circuits. New York, NY: McGraw-Hill, 1994. ISBN: 9780070214965.

Amazon logo Sedra, Adel, and Kenneth Smith. Microelectronic Circuits. New York, NY: Oxford University Press, 2007. ISBN: 9780195338836.

Amazon logo Horenstein, Mark. Microelectronic Circuits and Devices. New York, NY: Pearson, 1996. ISBN: 9780536846761.

Modular Series on Solid State Devices

Amazon logo Pierret, Robert. Semiconductor Fundamentals. Vol. I. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122954.

Amazon logo Neudeck, George. The PN Junction Diode. Vol. II. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122961.

Amazon logo ———. The Bipolar Junction Transistor. Vol. III. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1989. ISBN: 9780201122978.

Amazon logo Pierret, Robert. Field Effect Devices. Vol. IV. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1990. ISBN: 9780201122985.

Lecture Notes

Abbreviations

MOS = metal-on-silicon MOSFET = metal-oxide-semiconductor field-effect transistor NMOS = n-type metal-oxide-semiconductor CMOS = complementary metal-oxide-semiconducto r

LEC #

TOPICS

LECTURE NOTES

1

6.012 outline: grading, ethics

Overview of semiconductor applications, silicon integrated circuit technology

(PDF)

2

Intrinsic semiconductors, electrons and holes, bond model, generation recombination and thermal equilibrium; doping, donors, acceptors, compensation

(PDF)

3

Carrier transport, drift velocity, drift current density, diffusion current density

(PDF)

4

The p-n junction, carrier concentration and potential in thermal equilibrium, 60mV rule

(PDF)

5

The p-n junction in thermal equilibrium

(PDF)

6

Introduction to the MOS structure, MOS capacitor in thermal equilibrium

(PDF)

7

MOS capacitor under applied bias; accumulation, depletion, and inversion regions

(PDF)

8

MOSFET physical structure, circuit symbol and terminal characteristics, MOS transistor characteristics

(PDF)

9

MOS transistor, backgate effect, MOSFET in saturation

(PDF)

10

MOSFET small-signal model

(PDF - 1.2MB)

11

Digital logic concepts, inverter characteristics, logic levels and noise margins, transient characteristics, inverter circuits, NMOS/resistor loads

(PDF)

12

NMOS/current source load, CMOS inverter, static analysis

(PDF)

13

CMOS inverter, propagation delay model, static CMOS gates

(PDF ‑ 1.0MB)

14

p-n junction diode terminal characteristics, minority carrier concentration under forward and reverse bias

(PDF)

15

Short base approximation, steady state diffusion equation with currents in p-n junction

(PDF)

16

p-n junction diode circuit model, large signal static model, small signal model, diffusion capacitance

(PDF)

17

Introduction of bipolar junction transistor, terminal characteristics, forward active bias, current gain

(PDF)

18

Reverse active mode and saturation, the Ebers-Moll model

(PDF)

19

Single stage amplifiers, two port small signal model, common source amplifier with resistor and current source supply

(PDF)

20

Common base/gate amplifier, common collector/drain

(PDF)

21

Review frequency domain analysis; current gain frequency response of common emitter amplifier

(PDF)

22

Voltage gain frequency response of common emitter amplifier, full analysis of common emitter, the Miller approximation

(PDF)

23

Open circuit time constant analysis, common-gate (CG) and common-drain (CD) amplifiers

(PDF)

24

Multistage amplifiers, cascading small signal two port models

(PDF)

25

DC coupling, voltage sources, MOS current sources, current sources and sinks

(PDF)

26

Analyzing complex circuits, course wrap-up

(PDF)

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