6.012 is the header course for the department's "Devices, Circuits and Systems" concentration. The topics covered include: modeling of microelectronic devices, basic microelectronic circuit analysis and design, physical electronics of semiconductor junction and metal-on-silicon (MOS) devices, relation of electrical behavior to internal physical processes, development of circuit models, and understanding the uses and limitations of various models. The course uses incremental and large-signal techniques to analyze and design bipolar and field effect transistor circuits, with examples chosen from digital circuits, single-ended and differential linear amplifiers, and other integrated circuits.
Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
Fonstad, Clifton. Microelectronic Devices and Circuits. New York, NY: McGraw-Hill, 1994. ISBN: 9780070214965.
Sedra, Adel, and Kenneth Smith. Microelectronic Circuits. New York, NY: Oxford University Press, 2007. ISBN: 9780195338836.
Horenstein, Mark. Microelectronic Circuits and Devices. New York, NY: Pearson, 1996. ISBN: 9780536846761.
Modular Series on Solid State Devices
Pierret, Robert. Semiconductor Fundamentals. Vol. I. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122954.
Neudeck, George. The PN Junction Diode. Vol. II. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122961.
———. The Bipolar Junction Transistor. Vol. III. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1989. ISBN: 9780201122978.
Pierret, Robert. Field Effect Devices. Vol. IV. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1990. ISBN: 9780201122985.
MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
NMOS = n-type metal-oxide-semiconductor
CMOS = complementary metal-oxide-semiconducto
6.012 outline: grading, ethics
Overview of semiconductor applications, silicon integrated circuit technology